 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N5339 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 25 o C Storage Temperature Max. Operating Junction Temperature Value 100 100 6 5 7 1 6 1 -65 to 200 200 Unit V V V A A A W W o o C C June 1997 1/4 2N5339 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 29.2 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I CEX I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CE = 90 V V CE = 90 V V CE = 90 V V EB = -6 V I C = 50 mA IC = 2 A IC = 5 A IC = 2 A IC = 5 A I C = 0.5 A IC = 2 A IC = 5 A I C = 0.5 A IE = 0 IC = 2 A I B = 200 mA I B = 500 mA I B = 200 mA I B = 500 mA VCE = 2 V V CE = 2 V V CE = 2 V V CE = 10 V V CB = 10 V V CC = 40 V f = 0.1 MHz I B1 = 0.2 A 60 60 40 30 250 200 2 200 100 0.7 1.2 1.2 1.8 240 MHz pF ns s ns Min. Typ. Max. 10 100 10 1 100 Unit A A A mA A V V V V V T C = 150 o C V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain fT C CBO t on ts tf Transition Frequency Collector-Base Capacitance Turn on Time Storage Time Fall Time IC = 2 A V CC = 40 V I B1 = -IB2 = 0.2A Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 2N5339 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N5339 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
Price & Availability of 2N5339
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |